1- Bonded SOI wafer (绝缘硅上键合硅片）
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For 4”(100mm）, 5”（125mm）, 6”（150mm）
—— Handle wafer minimum 300um maximum 1000um
—— Buried Oxide, minimum 0.1 um, maximum 4 um
—— Device layer minimum 2 um, max 500 um.（几十至几百纳米for6英寸）
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For 8″（200mm）
—— Handle thickness minimum 500um and maximum 675um,
—— Buried Oxide minimum 0.1 um, maximum 4 um
—— Device layer minimum 5 um, maximum 500 um（几十至几百纳米）
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2- Si-Si direct wafer bonding (replacement for epi) 硅–硅直接键合，可替代外延片
100mm, 125mm, 150mm and 200mm, thickness as specified above.
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3- Engineered SOI, Double SOI (DSOI), Trench Isolation SOI (dielectric isolation),
Cavity SOI (for pressure sensor, gyro and accelerometer sensor, microfludic etc.) and finally Through Silicon Via (TSV)
—— Cavity SOI- Bonded SOI or Silicon DWB wafers with cavities performed within the wafer
—— Multiple SOI 2 or 3 or more layers of SOI designed around your process
—— Structured wafers silicon wafers or SOI with buried electrode layers, vias, interconnect already incorporated
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4- SOI + Trench & Refill Features
a. Significant die shrink compared to conventional dielectric isolation(DI) or junction isolation
b. Bulk quality top silicon layer
c. Total device-to-device isolation
d. Lower substrate capacitance than bulk
e. Fully flexible specification on SOI, Trench and refill parameters
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5- Superjunction MOSFET
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Parameter Parameter
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Specification Range
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Wafer Diameter
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100, 125, 150 mm
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200 mm
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Handle Layer Specifications
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Handle Thickness
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200–1000 µm
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500-750 µm
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Handle Thickness Tolerance
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±5 µm
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Stack Thickness
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≥280 – ≤1250 µm
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Dopant Type
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N or P
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Doping
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N type: Phos, Red Phos, Sb & As
P type: Boron
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Resistivity
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≤0.001 – ≥10000 Ω-cm
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Growth Method
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CZ, MCZ or FZ
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Crystal Orientation
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<100>, <111> or <110>
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Backside Finish
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Lapped/Etched or Polished
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Buried Oxide Specifications
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Thermally Oxidised Buried Oxide Thickness
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0.2 – 5.0 µm grown on Handle, Device or both wafers
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Device Layer Specifications
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Device Layer Thickness
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≥1.5 µm
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5-300 µm
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Tolerance
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± 0.5 µm
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±0.8 µm
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Dopant Type
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N or P
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Doping
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N type: Phos, Red Phos, Sb & As
P type: Boron
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Resistivity
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≤0.001 – ≥10000 Ω-cm
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Growth Method
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CZ, MCZ or FZ
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Crystal Orientation
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<100>, <111> or <110>
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Buried Layer Implant
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N type or P type
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SOI应用优势
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SOI高速特性
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微处理器，高速通信，三维图象处理，先进多媒体
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SOI低压低功耗特点
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移动计算机，移动电话，便携式电子设备，射频集成灵巧功率器件以及其它要求功耗低、散热快的领域，如单芯片系统SOC，微小卫星等
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SOI应用于恶劣环境
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高温器件，高压器件，卫星或其它空间应用，武器控制系统等
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SOI光通信和MEMS应用
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作为一种结构材料，可制作硅基集成光电器件，应用于高速宽带互联网和其它光网络的接口。此外，SOI圆片还广泛应用于制作微机电系统(MEMS)器件，如传感器
碳化硅sic衬底 |
