1- Bonded SOI wafer (绝缘硅上键合硅片） |
For 4”(100mm）, 5”（125mm）, 6”（150mm）
—— Handle wafer minimum 300um maximum 1000um
—— Buried Oxide, minimum 0.1 um, maximum 4 um
—— Device layer minimum 2 um, max 500 um.（几十至几百纳米for6英寸） | For 8″（200mm）
—— Handle thickness minimum 500um and maximum 675um,
—— Buried Oxide minimum 0.1 um, maximum 4 um
—— Device layer minimum 5 um, maximum 500 um（几十至几百纳米）
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2- Si-Si direct wafer bonding (replacement for epi) 硅–硅直接键合，可替代外延片
100mm, 125mm, 150mm and 200mm, thickness as specified above. |
3- Engineered SOI, Double SOI (DSOI), Trench Isolation SOI (dielectric isolation),
Cavity SOI (for pressure sensor, gyro and accelerometer sensor, microfludic etc.) and finally Through Silicon Via (TSV)
—— Cavity SOI- Bonded SOI or Silicon DWB wafers with cavities performed within the wafer
—— Multiple SOI 2 or 3 or more layers of SOI designed around your process
—— Structured wafers silicon wafers or SOI with buried electrode layers, vias, interconnect already incorporated |
4- SOI + Trench & Refill Features
a. Significant die shrink compared to conventional dielectric isolation(DI) or junction isolation
b. Bulk quality top silicon layer
c. Total device-to-device isolation
d. Lower substrate capacitance than bulk
e. Fully flexible specification on SOI, Trench and refill parameters |
5- Superjunction MOSFET |
Parameter Parameter | Specification Range |
Wafer Diameter | 100, 125, 150 mm | 200 mm |
Handle Layer Specifications |
Handle Thickness | 200–1000 µm | 500-750 µm |
Handle Thickness Tolerance | ±5 µm |
Stack Thickness | ≥280 – ≤1250 µm |
Dopant Type | N or P |
Doping | N type: Phos, Red Phos, Sb & As
P type: Boron |
Resistivity | ≤0.001 – ≥10000 Ω-cm |
Growth Method | CZ, MCZ or FZ |
Crystal Orientation | <100>, <111> or <110> |
Backside Finish | Lapped/Etched or Polished |
Buried Oxide Specifications |
Thermally Oxidised Buried Oxide Thickness | 0.2 – 5.0 µm grown on Handle, Device or both wafers | |
Device Layer Specifications |
Device Layer Thickness | ≥1.5 µm | 5-300 µm |
Tolerance | ± 0.5 µm | ±0.8 µm |
Dopant Type | N or P |
Doping | N type: Phos, Red Phos, Sb & As
P type: Boron |
Resistivity | ≤0.001 – ≥10000 Ω-cm |
Growth Method | CZ, MCZ or FZ |
Crystal Orientation | <100>, <111> or <110> |
Buried Layer Implant | N type or P type |
SOI应用优势 |
SOI高速特性 | 微处理器，高速通信，三维图象处理，先进多媒体 |
SOI低压低功耗特点 | 移动计算机，移动电话，便携式电子设备，射频集成灵巧功率器件以及其它要求功耗低、散热快的领域，如单芯片系统SOC，微小卫星等 |
SOI应用于恶劣环境 | 高温器件，高压器件，卫星或其它空间应用，武器控制系统等 |
SOI光通信和MEMS应用 | 作为一种结构材料，可制作硅基集成光电器件，应用于高速宽带互联网和其它光网络的接口。此外，SOI圆片还广泛应用于制作微机电系统(MEMS)器件，如传感器 碳化硅sic衬底 优质晶圆厂家 硅片哪里能买到 |
